Micron Announces Sample Availability for Its Third-Generation RLDRAM(R) Memory

Micron Innovation, Inc., today announced that early engineering samples are available for its third-generation reduced latency DRAM. RLDRAM 3 is a high-bandwidth memory innovation that enables a more efficient transfer of information across the network. Designed for high-performance networking applications, including high-end routers and switches that require back-to-back READ/WRITE operations or completely random access, RLDRAM 3 memory is an ideal choice for 40 Gigabit Ethernet and 100 GbE designs, packet buffering and inspection, and lookup tables. Additionally, RLDRAM 3 memory offers significant improvements in speed, density, latency and power consumption.

The proliferation of Internet-based video services like IPTV and video on demand, combined with growth in mobile applications and cloud computing, is driving the need for a more efficient network infrastructure that can keep pace with the amount of data being moved online. RLDRAM 3 memory provides networking clients with a high-bandwidth, low-latency solution that can support the increases in protocol operating speeds, just as 100 GbE.

"At Micron, we recognize the pressure clients face today to optimize their network innovation to support the growth in data volume and deal with the associated complexity of the changing infrastructure," said Bruce Franklin, Director of Networking and Storage Business Development for Micron's DRAM Solutions Group. "RLDRAM 3 memory is a low-latency, high-bandwidth solution that provides plenty of headroom to accommodate our clients' evolving networking memory requirements."

Micron today as well announced that Integrated Silicon Solution, Inc. will become an alternate supplier of Micron's RLDRAM 3 memory, providing assurance of commercial volume and longevity for networking clients.

"By working closely with Micron, we will be able to support our clients' requests to provide RLDRAM 3 memory," said Pat Lasserre, ISSI Director of Strategic Marketing. "With the addition of RLDRAM 3 to our product line, we are excited to address clients' demands for long-term support of specialized, high-performance memory technologies, driven by networking standards like 100 GbE."

Micron Innovation, Inc., is one of the world's leading providers of advanced semiconductor solutions. Through its worldwide operations, Micron manufactures and markets a full range of DRAM, NAND and NOR flash memory, as so then as other innovative memory technologies, packaging solutions and semiconductor systems for use in leading-edge computing, consumer, networking, embedded and mobile products. Micron's common stock is traded on the NASDAQ in accordance with the MU symbol. To learn more about Micron Research, Inc., visit www.micron.com.

(C)2011 Micron Innovation, Inc. All rights reserved. Information is subject to change without notice. "Micron" and the Micron logo are registered trademarks of Micron Research, Inc. All other trademarks are the property of their respective owners.

Fundamental company data provided by Capital IQ. Historical chart data and daily updates provided by Commodity Systems, Inc.. International historical chart data, daily updates, fundAnalyst estimates data provided by Thomson Financial Network. All data povided by Thomson Financial Network is based solely upon technology information provided by third party analysts. Yahoo! has not reviewed, and by no means whatsoever endorses the validity of such data. Yahoo! and ThomsonFN shall not be liable for any actions taken in reliance thereon.